1N5627-TAP

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 3A SOD64

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 3A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	1N5627-TAP

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	7.5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-64
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Capacitance @ Vr, F	Supplier Device Package	Package / Case	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Vishay General Semiconductor - Diodes Division 1N5627-TR	175 ░C	-55 C	7.5 µs	800 V	Standard Recovery >500ns	200 mA	60 pF	SOD-64	Axial SOD-64	Avalanche	3 A	1 µA	1 V	Through Hole
Vishay General Semiconductor - Diodes Division 1N5627GP-E3/54	175 ░C	-65 C	3 çs	800 V	Standard Recovery >500ns	200 mA	40 pF	DO-201AD	DO-201AD Axial	Standard	3 A	5 µA	1 V	Through Hole
Vishay General Semiconductor - Diodes Division 1N5627-TAP	175 ░C	-55 C	7.5 µs	800 V	Standard Recovery >500ns	200 mA	60 pF	SOD-64	Axial SOD-64	Avalanche	3 A	1 µA	1 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 3A Through Hole SOD-64

Technical documentation and resources