MUR10060CTR

Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 600V 50A 2TOWER

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 600V 50A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MUR10060CTR

Current - Average Rectified (Io) (per Diode)	50 A
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Reverse Recovery Time (trr)	110 ns
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Package / Case	Supplier Device Package
GeneSiC Semiconductor MUR10060CTR	200 mA 500 ns	1.7 V	Chassis Mount	150 °C	-55 °C	1 Pair Common Anode	600 V	Standard	110 ns	50 A	Twin Tower	Twin Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Anode 600 V 50A Chassis Mount Twin Tower

Technical documentation and resources