VS-31DQ03

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 3.3A C16

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 3.3A C16

Technical Specifications

Parameters and characteristics for this part

Specification	VS-31DQ03

Current - Average Rectified (Io)	3.3 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	C-16
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	570 mV

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-31DQ03TR	3.3 A	1 mA	C-16	DO-201AD Axial	Through Hole	200 mA 500 ns	30 V	570 mV	Schottky	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VS-31DQ03	3.3 A	1 mA	C-16	DO-201AD Axial	Through Hole	200 mA 500 ns	30 V	570 mV	Schottky	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 3.3A Through Hole C-16

Technical documentation and resources