PJS6412_S1_00001

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Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6412_S1_00001

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	392 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	FET Type	Mounting Type	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJS6412_S1_00001	30 V	20 V	4.3 nC	-55 °C	150 °C	SOT-23-6	SOT-23-6	N-Channel	Surface Mount	MOSFET (Metal Oxide)	2 W	392 pF	2.5 V	4.5 V 10 V	23 mOhm	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 8A (Ta) 2W (Ta) Surface Mount SOT-23-6

Technical documentation and resources