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GP1006H - SFF505GH

GP1006H

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Taiwan Semiconductor Corporation

DIODE ARRAY GP 800V 10A TO220AB

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GP1006H - SFF505GH

GP1006H

Active
Taiwan Semiconductor Corporation

DIODE ARRAY GP 800V 10A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGP1006H
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr5 µA
Diode Configuration1 Pair Common Cathode
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-3
QualificationAEC-Q101
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageTO-220AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.91
10$ 0.79
100$ 0.54
500$ 0.46
1000$ 0.39
2000$ 0.35
5000$ 0.33
10000$ 0.30

Description

General part information

GP1006 Series

Diode Array 1 Pair Common Cathode 800 V 10A Through Hole TO-220-3

Documents

Technical documentation and resources