PJQ5426_R2_00001

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Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5426_R2_00001

Current - Continuous Drain (Id) @ 25°C	115 A, 20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	136 W, 2 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJQ5426_R2_00001	20 A 115 A	N-Channel	30 V	4.5 V 10 V	MOSFET (Metal Oxide)	DFN5060-8	35 nC	8-PowerVDFN	20 V	2.5 V	Surface Mount	2 W 136 W	4305 pF	2.4 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 20A (Ta), 115A (Tc) 2W (Ta), 136W (Tc) Surface Mount DFN5060-8

Technical documentation and resources

No documents available