IRF730

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Harris Corporation

N-CHANNEL, MOSFET

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Harris Corporation

N-CHANNEL, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF730

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs [Max]	1 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type
Harris Corporation IRF730	20 V	1 Ohm	100 W	24 nC	530 pF	Through Hole	MOSFET (Metal Oxide)	5.5 A	TO-220	TO-220-3	150 °C	10 V	400 V	4 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	243	$ 1.24

General part information

N-Channel 400 V 5.5A (Tc) 100W (Tc) Through Hole TO-220

Technical documentation and resources

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