PJL9418_R2_00001

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Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJL9418_R2_00001

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.7 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PJL9418_R2_00001	Surface Mount	4.5 V 10 V	8-SOP	2.5 V	-55 °C	150 °C	30 V	18 A	N-Channel	1.7 W	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	20 V	4305 pF	2.4 mOhm	35 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 18A (Ta) 1.7W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available