MBR80100R

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V 80A DO5

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V 80A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	MBR80100R

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	840 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor MBR80100R	150 °C	-65 C	80 A	Chassis Stud Mount	5 mA	840 mV	Reverse Polarity Schottky	DO-203AB DO-5 Stud	200 mA 500 ns	DO-5	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	300	$ 18.51

General part information

Diode 100 V 80A Chassis, Stud Mount DO-5

Technical documentation and resources