TJ15S06M3L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 15A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 15A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ15S06M3L,LXHQ

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	41 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max) [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TJ15S06M3L,LXHQ	41 W	175 °C	50 mOhm	DPAK+	1770 pF	MOSFET (Metal Oxide)	P-Channel	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	36 nC	-20 V	10 V	6 V 10 V	3 V	60 V	15 A

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General part information

P-Channel 60 V 15A (Ta) 41W (Tc) Surface Mount DPAK+

Technical documentation and resources