XP161A11A1PR-G

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Torex Semiconductor Ltd

MOSFET N-CH 30V 4A SOT89

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Torex Semiconductor Ltd

MOSFET N-CH 30V 4A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	XP161A11A1PR-G

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature	Power Dissipation (Max) [Max]	Mounting Type	Technology	Drain to Source Voltage (Vdss)
Torex Semiconductor Ltd XP161A11A1PR-G	20 V	4 A	N-Channel	4.5 V 10 V	270 pF	65 mOhm	TO-243AA	150 °C	2 W	Surface Mount	MOSFET (Metal Oxide)	30 V

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General part information

N-Channel 30 V 4A (Ta) 2W (Ta) Surface Mount SOT-89

Technical documentation and resources