1N4007 BK

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Central Semiconductor Corp

DIODE GEN PURP 1KV 1A DO41

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Central Semiconductor Corp

DIODE GEN PURP 1KV 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4007 BK

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Capacitance @ Vr, F	Package / Case
Central Semiconductor Corp 1N4007GPP TR	Standard Recovery >500ns	200 mA	1000 V	1 A	175 ░C	-65 C	Through Hole	5 µA	2 µs	1.1 V	Standard	DO-41	8 pF	Axial DO-204AL DO-41
Central Semiconductor Corp 1N4007 BK	Standard Recovery >500ns	200 mA	1000 V	1 A	175 ░C	-65 C	Through Hole	5 µA		1.1 V	Standard	DO-41		Axial DO-204AL DO-41

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	18000	$ 0.05

General part information

Diode 1000 V 1A Through Hole DO-41

Technical documentation and resources