GBPC1510W

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GeneSiC Semiconductor

BRIDGE RECT 1P 1KV 15A GBPC-W

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GeneSiC Semiconductor

BRIDGE RECT 1P 1KV 15A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC1510W

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Average Rectified (Io)	Package / Case	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]
GeneSiC Semiconductor GBPC1510T	-55 °C	150 °C	Standard	15 A	4-Square GBPC	Single Phase	5 µA	1.1 V	Through Hole	GBPC	1000 V
GeneSiC Semiconductor GBPC1510W	-55 °C	150 °C	Standard	15 A	4-Square GBPC-W	Single Phase	5 µA	1.1 V	Through Hole	GBPC-W	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBPC-W

Technical documentation and resources