BY25Q80ESSIG(R)

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BYTe Semiconductor

IC FLASH 8MBIT SPI/QUAD 8SOP

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BYTe Semiconductor

IC FLASH 8MBIT SPI/QUAD 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	BY25Q80ESSIG(R)

Access Time	7 ns
Clock Frequency	120 MHz
Memory Format	FLASH
Memory Interface	SPI - Quad I/O
Memory Organization [custom]	1 M
Memory Organization [custom]	8 bits
Memory Size	1024 KB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.209 "
Package / Case [y]	5.3 mm
Supplier Device Package	8-SOP
Technology	FLASH - NOR
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	55 µs
Write Cycle Time - Word, Page [custom]	2 ms

Part	Clock Frequency	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Access Time	Supplier Device Package	Memory Format	Memory Interface	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Size	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [y]	Package / Case	Package / Case [x]	Memory Organization [custom]	Memory Organization [custom]	Mounting Type	Memory Type
BYTe Semiconductor BY25Q80ESSIG(R)	120 MHz	85 °C	-40 °C	FLASH - NOR	7 ns	8-SOP	FLASH	SPI - Quad I/O	55 µs	2 ms	1024 KB	2.7 V	3.6 V	5.3 mm	8-SOIC	0.209 "	1 M	8 bits	Surface Mount	Non-Volatile

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 120 MHz 7 ns 8-SOP

Technical documentation and resources