2SA1987-O(Q)

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Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO3P

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Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1987-O(Q)

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	180 W
Supplier Device Package	TO-3P(L)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	230 V

Part	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature	Frequency - Transition	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic
Toshiba Semiconductor and Storage 2SA1987-O(Q)	TO-3PL	TO-3P(L)	230 V	5 µA	15 A	180 W	80	150 °C	30 MHz	Through Hole	PNP	3 V

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General part information

Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)

Technical documentation and resources