VS-2EGH02-M3/5BT

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 2A DO214AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-2EGH02-M3/5BT

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	23 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AA (SMBJ)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Supplier Device Package	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Current - Average Rectified (Io)	Speed	Package / Case
Vishay General Semiconductor - Diodes Division VS-2EGH02HM3/5BT	SMB	DO-214AA	21 ns	Standard	Surface Mount	2 µA	175 ░C	-65 C	900 mV	Automotive	200 V	AEC-Q101	2 A	200 mA 500 ns	DO-214AA SMB
Vishay General Semiconductor - Diodes Division VS-2EGH02-M3/5BT		DO-214AA (SMBJ)	23 ns	Standard	Surface Mount	2 µA	175 ░C	-55 C	900 mV		200 V		2 A	200 mA 500 ns	DO-214AA SMB

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General part information

Diode 200 V 2A Surface Mount DO-214AA (SMBJ)

Technical documentation and resources