W66BM6NBUAGJ TR
Winbond Electronics
IC DRAM 2GBIT LVSTL 11 200WFBGA
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W66BM6NBUAGJ TR
Winbond Electronics
IC DRAM 2GBIT LVSTL 11 200WFBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | W66BM6NBUAGJ TR |
|---|---|
| Clock Frequency | 1866 MHz |
| Memory Format | DRAM |
| Memory Organization | 128 M |
| Memory Size | 2 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Technology | SDRAM - Mobile LPDDR4X |
| Voltage - Supply [Max] | 1.95 V, 1.17 V |
| Voltage - Supply [Min] | 1.06 V, 1.7 V |
| Write Cycle Time - Word, Page | 18 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 5.67 | |
Description
General part information
W66BM6 Series
SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)
Documents
Technical documentation and resources