WNB199V5APTSV

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WeEn Semiconductors Co., Ltd

WNB199V5APTS/NAU000/NO MARK*CHIP

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WeEn Semiconductors Co., Ltd

WNB199V5APTS/NAU000/NO MARK*CHIP

Technical Specifications

Parameters and characteristics for this part

Specification	WNB199V5APTSV

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	Die
Reverse Recovery Time (trr)	55 ns
Speed	200 mA, 500 ns
Supplier Device Package	Wafer
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Package / Case
WeEn Semiconductors Co., Ltd WNB199V5APTSV	10 µA	Surface Mount	600 V	175 °C	60 A	2 V	Standard	55 ns	Wafer	200 mA 500 ns	Die

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	484	$ 0.86

General part information

Diode 600 V 60A Surface Mount Wafer

Technical documentation and resources

No documents available