WG50N65DHJQ

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WeEn Semiconductors Co., Ltd

IGBT TRENCH FS 650V 91A TO-247-3

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WeEn Semiconductors Co., Ltd

IGBT TRENCH FS 650V 91A TO-247-3

Technical Specifications

Parameters and characteristics for this part

Specification	WG50N65DHJQ

Current - Collector (Ic) (Max) [Max]	91 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	160 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	278 W
Reverse Recovery Time (trr)	105 ns
Supplier Device Package	TO-247-3
Switching Energy [custom]	1.7 mJ
Switching Energy [custom]	600 µJ
Td (on/off) @ 25°C	163 ns, 66 ns
Test Condition [custom]	400 V, 15 V
Test Condition [custom]	10 Ohm
Test Condition [custom]	50 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Mounting Type	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Switching Energy [custom]	Switching Energy [custom]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Gate Charge	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	IGBT Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
WeEn Semiconductors Co., Ltd WG50N65DHJQ	Through Hole	TO-247-3	2 V	15 V 400 V	10 Ohm	50 A	-55 °C	150 °C	TO-247-3	1.7 mJ	600 µJ	650 V	200 A	160 nC	66 ns 163 ns	105 ns	Trench Field Stop	91 A	278 W
WeEn Semiconductors Co., Ltd WG50N65DHWQ	Through Hole	TO-247-3	2 V	15 V 400 V	10 Ohm	50 A	-55 °C	150 °C	TO-247-3	1.7 mJ	600 µJ	650 V	200 A	160 nC	66 ns 163 ns	105 ns	Trench Field Stop	91 A	278 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	960	$ 1.65

General part information

IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3

Technical documentation and resources

No documents available