MBR3530R

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V 35A DO4

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V 35A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	MBR3530R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	1.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Stud, DO-203AA, DO-4
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	680 mV

Part	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
GeneSiC Semiconductor MBR3530R	Reverse Polarity Schottky	DO-203AA DO-4 Stud	150 °C	-55 °C	DO-4	680 mV	1.5 mA	Chassis Stud Mount	200 mA 500 ns	30 V	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	500	$ 12.66

General part information

Diode 30 V 35A Chassis, Stud Mount DO-4

Technical documentation and resources