PJMB130N65EC_R2_00601

Unknown

Panjit International Inc.

650V/ 130MOHM / 29A/ EASY TO DRI

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Unknown

Panjit International Inc.

650V/ 130MOHM / 29A/ EASY TO DRI

Technical Specifications

Parameters and characteristics for this part

Specification	PJMB130N65EC_R2_00601

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1920 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	235 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Panjit International Inc. PJMB130N65EC_R2_00601	235 W	MOSFET (Metal Oxide)	Surface Mount	51 nC	1920 pF	29 A	30 V	N-Channel	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	130 mOhm	TO-263	10 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 29A (Tc) 235W (Tc) Surface Mount TO-263

Technical documentation and resources