AOWF160A60

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO262F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO262F

Technical Specifications

Parameters and characteristics for this part

Specification	AOWF160A60

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	27.7 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-262F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type
Alpha & Omega Semiconductor Inc. AOWF160A60	160 mOhm	10 V	2340 pF	600 V	24 A	46 nC	3 V	TO-262F	I2PAK TO-262-3 Long Leads TO-262AA	27.7 W	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.52

General part information

N-Channel 600 V 24A (Tc) 27.7W (Tc) Through Hole TO-262F

Technical documentation and resources