AOB600A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB600A60L

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds	608 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Alpha & Omega Semiconductor Inc. AOB600A70L	Surface Mount	870 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 V	700 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	600 mOhm	10 V	8.5 A	N-Channel	-55 °C	150 °C	104 W	15.5 nC
Alpha & Omega Semiconductor Inc. AOB600A70FL	Surface Mount		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	700 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	600 mOhm	10 V	8.5 A	N-Channel	-55 °C	150 °C	104 W	14.5 nC	900 pF
Alpha & Omega Semiconductor Inc. AOB600A60L	Surface Mount	608 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 V	600 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	600 mOhm	10 V	8 A	N-Channel	-55 °C	150 °C	96 W	11.5 nC

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General part information

N-Channel 600 V 8A (Tc) 96W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources