2N3962

Obsolete

ON Semiconductor

TRANS PNP 60V 0.2A TO18

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Obsolete

ON Semiconductor

TRANS PNP 60V 0.2A TO18

Technical Specifications

Parameters and characteristics for this part

Specification	2N3962

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	360 mW
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Transistor Type
ON Semiconductor 2N3962	TO-18	200 mA	100	400 mV	TO-18-3 Metal Can TO-206AA	60 V	10 nA	Through Hole	360 mW	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 60 V 200 mA 360 mW Through Hole TO-18

Technical documentation and resources