SI4410DY

Obsolete

ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC

Search across all available documentation for this part.

Obsolete

ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4410DY

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology
ON Semiconductor SI4410DY	N-Channel	Surface Mount	60 nC	20 V	1350 pF	8-SOIC	3.9 mm	0.154 in	30 V	2.5 W	8-SOIC	4.5 V 10 V	-55 °C	150 °C	1 V	10 A	13.5 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources