PJQ2416_R1_00001

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Panjit International Inc.

DFN2020B-6L, MOSFET

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Panjit International Inc.

DFN2020B-6L, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2416_R1_00001

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1177 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
Panjit International Inc. PJQ2416_R1_00001	DFN2020B-6	MOSFET (Metal Oxide)	11 mOhm	10 V	2 W	20 V	11 A	-55 °C	150 °C	Surface Mount	1.8 V 4.5 V	1 V	1177 pF	16 nC	N-Channel

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General part information

N-Channel 20 V 11A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources