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ES3DV V7G - SMCJ16C

ES3DV V7G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

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ES3DV V7G - SMCJ16C

ES3DV V7G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationES3DV V7G
Capacitance @ Vr, F45 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSMC, DO-214AB
Reverse Recovery Time (trr)20 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214AB (SMC)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

ES3D Series

Diode 200 V 3A Surface Mount DO-214AB (SMC)

Documents

Technical documentation and resources

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