PJQ5948V-AU_R2_002A1

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Panjit International Inc.

MOSFET 2N-CH 40V 10.5A 8DFN

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Panjit International Inc.

MOSFET 2N-CH 40V 10.5A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5948V-AU_R2_002A1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10.5 A, 35 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	673 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	32 W, 2.4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13.4 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Grade	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Qualification	Configuration
Panjit International Inc. PJQ5948V-AU_R2_002A1	10.5 A 35 A	3.5 V	13.4 mOhm	Automotive	8-PowerTDFN	9.5 nC	40 V	Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 ░C	2.4 W 32 W	673 pF	DFN5060B-8	AEC-Q101	2 N-Channel (Dual)

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General part information

Mosfet Array 40V 10.5A (Ta), 35A (Tc) 2.4W (Ta), 32W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources