1N5811/TR

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Microsemi Corporation

DIODE GEN PURP 150V 6A AXIAL

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Microsemi Corporation

DIODE GEN PURP 150V 6A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	1N5811/TR

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, B
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	B, Axial
Technology	Standard

Part	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Technology	Current - Average Rectified (Io)
Microsemi Corporation 1N5811/TR	5 µA	Axial B	B Axial	200 mA 500 ns	175 ░C	-65 C	30 ns	Through Hole	Standard	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	4000	$ 6.45

General part information

Diode 150 V 6A Through Hole B, Axial

Technical documentation and resources