G3R350MT12D

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GeneSiC Semiconductor

SIC MOSFET N-CH 11A TO247-3

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GeneSiC Semiconductor

SIC MOSFET N-CH 11A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	G3R350MT12D

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	334 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-247-3
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.69 V

Part	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
GeneSiC Semiconductor G3R350MT12J	2.69 V	N-Channel	15 V	334 pF	420 mOhm	-55 °C	175 ░C	Surface Mount	1200 V	75 W	15 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	TO-263-7	12 nC	11 A
GeneSiC Semiconductor G3R350MT12D	2.69 V	N-Channel	15 V	334 pF	420 mOhm	-55 °C	175 ░C	Through Hole	1200 V		15 V	TO-247-3	TO-247-3	12 nC	11 A	74 W

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General part information

N-Channel 1200 V 11A (Tc) 74W (Tc) Through Hole TO-247-3

Technical documentation and resources