VS-12FL60S02

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 12A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-12FL60S02

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-12FL60S05	Chassis Stud Mount	600 V	DO-203AA	DO-4	500 ns	50 µA	150 °C	-65 C	200 mA 500 ns	1.4 V	Standard	DO-203AA DO-4 Stud	12 A
Vishay General Semiconductor - Diodes Division VS-12FL60S02	Chassis Stud Mount	600 V	DO-203AA	DO-4	200 ns	50 µA	150 °C	-65 C	200 mA 500 ns	1.4 V	Standard	DO-203AA DO-4 Stud	12 A

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General part information

Diode 600 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources