GBU606H

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 6A GBU

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 6A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU606H

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case [custom]	4-ESIP, GBU
Qualification	AEC-Q101
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Supplier Device Package	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case [custom]	Grade	Qualification
Taiwan Semiconductor Corporation GBU606	Single Phase	5 µA	800 V	1 V	6 A	Standard	GBU	Through Hole	4-SIP GBU	-55 °C	150 °C
Taiwan Semiconductor Corporation GBU606H	Single Phase	5 µA	800 V	1.1 V	6 A	Standard	GBU	Through Hole		-55 °C	150 °C	4-ESIP GBU	Automotive	AEC-Q101

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General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBU

Technical documentation and resources