DNA30E2200FE

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IXYS

DIODE GEN PURP 2.2KV 30A I4-PAC

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IXYS

DIODE GEN PURP 2.2KV 30A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	DNA30E2200FE

Capacitance @ Vr, F	7 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	IPAK, TO-251-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	i4-PAC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Package / Case	Speed	Speed	Current - Reverse Leakage @ Vr
IXYS DNA30E2200PZ-TRL	Surface Mount	150 °C	-55 °C	2200 V	Standard	1.26 V	30 A	7 pF	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard Recovery >500ns	200 mA	40 µA
IXYS DNA30E2200PC	Surface Mount	175 ░C	-55 C	2200 V	Standard	1.26 V	30 A	7 pF	TO-263AA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard Recovery >500ns	200 mA	40 µA
IXYS DNA30E2200FE	Through Hole	175 ░C	-55 C	2200 V	Standard	1.25 V	30 A	7 pF	i4-PAC	IPAK TO-251-2	Standard Recovery >500ns	200 mA	40 µA
IXYS DNA30E2200PA	Through Hole	175 ░C	-55 C	2200 V	Standard	1.26 V	30 A	7 pF	TO-220AC	TO-220-2	Standard Recovery >500ns	200 mA	40 µA

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General part information

Diode 2200 V 30A Through Hole i4-PAC

Technical documentation and resources