VO216AT

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Vishay General Semiconductor - Diodes Division

OPTOISO 4KV TRANS W/BASE 8SOIC

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Vishay General Semiconductor - Diodes Division

OPTOISO 4KV TRANS W/BASE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	VO216AT

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	80 %
Current Transfer Ratio (Min) [Min]	50 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	2 µs
Rise / Fall Time (Typ) [custom]	3 µs
Supplier Device Package	8-SOIC
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1 V
Voltage - Isolation	4000 Vrms
Voltage - Output (Max) [Max]	30 V

Part	Voltage - Output (Max) [Max]	Input Type	Mounting Type	Current Transfer Ratio (Min) [Min]	Number of Channels	Voltage - Isolation	Turn On / Turn Off Time (Typ)	Vce Saturation (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Current Transfer Ratio (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division VO216AT	30 V	DC	Surface Mount	50 %	1	4000 Vrms	3 µs	400 mV	60 mA	8-SOIC	8-SOIC	3.9 mm	0.154 in	2 µs	3 µs	1 V	50 mA	80 %	100 °C	-40 °C

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General part information

Optoisolator Transistor with Base Output 4000Vrms 1 Channel 8-SOIC

Technical documentation and resources