IRFD9113

Active

Harris Corporation

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Search across all available documentation for this part.

Active

Harris Corporation

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD9113

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	FET Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Harris Corporation IRFD9113	4-DIP Hexdip HVMDIP	600 mA	Through Hole	4-DIP (0.300" 7.62mm)	P-Channel	MOSFET (Metal Oxide)	60 V	15 nC	1.6 Ohm	250 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	485	$ 0.62

General part information

P-Channel 60 V 600mA (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Technical documentation and resources

No documents available