1N5361B_R2_00001
ActivePanjit International Inc.
SILICON ZENER DIODE
Deep-Dive with AI
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DocumentsDatasheet
1N5361B_R2_00001
ActivePanjit International Inc.
SILICON ZENER DIODE
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5361B_R2_00001 |
|---|---|
| Current - Reverse Leakage @ Vr | 500 nA |
| Impedance (Max) (Zzt) [Max] | 5 Ohms |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DO-201AE, Axial |
| Power - Max [Max] | 5 W |
| Supplier Device Package | DO-201AE |
| Tolerance | 5 % |
| Voltage - Zener (Nom) (Vz) | 27 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.41 | |
| Tape & Reel (TR) | 500000 | $ 0.12 | ||
Description
General part information
1N5361 Series
Zener Diode 27 V 5 W ±5% Through Hole DO-201AE
Documents
Technical documentation and resources