VSLB9530S

Obsolete

Vishay General Semiconductor - Diodes Division

EMITTER IR 940NM 150MA 4-DIP

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Obsolete

Vishay General Semiconductor - Diodes Division

EMITTER IR 940NM 150MA 4-DIP

Technical Specifications

Parameters and characteristics for this part

Specification	VSLB9530S

Current - DC Forward (If) (Max) [Max]	150 mA
Mounting Type	Through Hole
Operating Temperature [Max]	95 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	4-DIP
Package / Case	0.2 in
Package / Case	0.2 in
Radiant Intensity (Ie) Min @ If [Min]	60 mW/sr
Type	Infrared (IR)
Viewing Angle	36 °
Voltage - Forward (Vf) (Typ)	1.28 V
Wavelength	940 nm

Part	Type	Wavelength	Orientation	Radiant Intensity (Ie) Min @ If [Min]	Mounting Type	Voltage - Forward (Vf) (Typ)	Package / Case	Package / Case	Package / Case	Current - DC Forward (If) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Viewing Angle
Vishay General Semiconductor - Diodes Division VSLB9530S	Infrared (IR)	940 nm	Top View	60 mW/sr	Through Hole	1.28 V	4-DIP	0.2 in	0.2 in	150 mA	95 °C	-40 °C	36 °

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Infrared (IR) Emitter 940nm 1.28V 150mA 60mW/sr @ 100mA 36° 4-DIP (0.200", 5.08mm)

Technical documentation and resources