
1N4007GHA0G
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
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1N4007GHA0G
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N4007GHA0G |
|---|---|
| Capacitance @ Vr, F | 10 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | DO-204AL, DO-41, Axial |
| Qualification | AEC-Q101 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-204AL (DO-41) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
1N4007 Series
Diode 1000 V 1A Through Hole DO-204AL (DO-41)
Documents
Technical documentation and resources
No documents available