STA509A

Obsolete

Sanken Electric USA Inc.

MOSFET 4N-CH 57V 3A 10SIP

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Obsolete

Sanken Electric USA Inc.

MOSFET 4N-CH 57V 3A 10SIP

Technical Specifications

Parameters and characteristics for this part

Specification	STA509A

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	57 V
Input Capacitance (Ciss) (Max) @ Vds [Max]	200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	10-SIP
Power - Max	4 W, 20 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	10-SIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Power - Max	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Configuration	Mounting Type	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Sanken Electric USA Inc. STA509A	4 W 20 W	57 V	10-SIP	3 A	10-SIP	250 mOhm	MOSFET (Metal Oxide)	4 N-Channel	Through Hole	150 °C	2.5 V	200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 57V 3A (Ta) 4W (Ta), 20W (Tc) Through Hole 10-SIP

Technical documentation and resources