LL5819 L0

Obsolete

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A MELF

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A MELF

Technical Specifications

Parameters and characteristics for this part

Specification	LL5819 L0

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AB, MELF
Speed	200 mA, 500 ns
Supplier Device Package	MELF
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Current - Average Rectified (Io)	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
Taiwan Semiconductor Corporation LL5819 L0G	600 mV	MELF	40 V	500 µA	110 pF	200 mA 500 ns	1 A	DO-213AB MELF	Schottky	125 °C	-65 C	Surface Mount
Taiwan Semiconductor Corporation LL5819 L0	900 mV	MELF	40 V	500 µA	110 pF	200 mA 500 ns	1 A	DO-213AB MELF	Schottky	125 °C	-65 C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 40 V 1A Surface Mount MELF

Technical documentation and resources

No documents available