VS-30EPU12L-N3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AD

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30EPU12L-N3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	145 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	220 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.68 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Grade	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification
Vishay General Semiconductor - Diodes Division VS-30EPU12LHN3	145 µA	30 A	2.68 V	TO-247AD	Automotive	TO-247-2	1.2 kV	200 mA 500 ns	Through Hole	Standard	220 ns	175 ░C	-55 C	AEC-Q101
Vishay General Semiconductor - Diodes Division VS-30EPU12L-N3	145 µA	30 A	2.68 V	TO-247AD		TO-247-2	1.2 kV	200 mA 500 ns	Through Hole	Standard	220 ns	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.58

General part information

Diode 1200 V 30A Through Hole TO-247AD

Technical documentation and resources