2SK2507(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 25A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 25A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2507(F)

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	TO-220NIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage 2SK2507(F)	TO-220NIS	N-Channel	4 V	10 V	25 nC	150 °C	46 mOhm	TO-220-3 Full Pack	900 pF	20 V	Through Hole	2 V	25 A	MOSFET (Metal Oxide)	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 25A (Ta) 30W (Tc) Through Hole TO-220NIS

Technical documentation and resources