C4D02120E-TR

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Wolfspeed

DIODE SIL CARB 1.2KV 10A TO252-2

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Wolfspeed

DIODE SIL CARB 1.2KV 10A TO252-2

Technical Specifications

Parameters and characteristics for this part

Specification	C4D02120E-TR

Capacitance @ Vr, F	167 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology
Wolfspeed C4D02120A	Through Hole	TO-220-2	175 ░C	-55 C	1.8 V	50 µA	No Recovery Time	TO-220-2	167 pF	1.2 kV	10 A	SiC (Silicon Carbide) Schottky
Wolfspeed C4D02120E	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	1.8 V	50 µA	No Recovery Time	TO-252-2	167 pF	1.2 kV	10 A	SiC (Silicon Carbide) Schottky
Wolfspeed C4D02120E-TR	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	1.8 V	50 µA	No Recovery Time	TO-252-2	167 pF	1.2 kV	10 A	SiC (Silicon Carbide) Schottky

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General part information

Diode 1200 V 10A Surface Mount TO-252-2

Technical documentation and resources