RW1C015UNT2R

Obsolete

Rohm Semiconductor

MOSFET N-CH 20V 1.5A 6WEMT

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Obsolete

Rohm Semiconductor

MOSFET N-CH 20V 1.5A 6WEMT

Technical Specifications

Parameters and characteristics for this part

Specification	RW1C015UNT2R

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	400 mW
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	6-WEMT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Mounting Type
Rohm Semiconductor RW1C015UNT2R	N-Channel	1.5 A	6-WEMT	110 pF	6-SMD Flat Leads	20 V	1.5 V 4.5 V	150 °C	400 mW	10 V	1.8 nC	180 mOhm	1 V	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT

Technical documentation and resources

No documents available