1N6481-E3/96

Active

Vishay General Semiconductor - Diodes Division

DIODE SWITCHING 400V 1A 2-PIN DO-213AB T/R

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE SWITCHING 400V 1A 2-PIN DO-213AB T/R

Technical Specifications

Parameters and characteristics for this part

Specification	1N6481-E3/96

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AB, MELF (Glass)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-213AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Speed	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division 1N6481HE3/96	Standard Recovery >500ns	200 mA	10 µA	Standard	Surface Mount	8 pF	175 ░C	-65 C	DO-213AB MELF (Glass)	1 A	DO-213AB	400 V	1.1 V
Vishay General Semiconductor - Diodes Division 1N6481-E3/96	Standard Recovery >500ns	200 mA	10 µA	Standard	Surface Mount	8 pF	175 ░C	-65 C	DO-213AB MELF (Glass)	1 A	DO-213AB	400 V	1.1 V
Vishay General Semiconductor - Diodes Division 1N6481HE3/97	Standard Recovery >500ns	200 mA	10 µA	Standard	Surface Mount	8 pF	175 ░C	-65 C	DO-213AB MELF (Glass)	1 A	DO-213AB	400 V	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Surface Mount DO-213AB

Technical documentation and resources