PJQ2422_R1_00001

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Panjit International Inc.

DFN2020B-6L, MOSFET

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Panjit International Inc.

DFN2020B-6L, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2422_R1_00001

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	392 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id
Panjit International Inc. PJQ2422_R1_00001	DFN2020B-6	-55 °C	150 °C	18 mOhm	N-Channel	30 V	392 pF	4.5 V 10 V	20 V	2 W	MOSFET (Metal Oxide)	8 A	4.3 nC	Surface Mount	2.5 V

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General part information

N-Channel 30 V 8A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources

No documents available