VS-3ECH01HM3/9AT

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 3A DO214AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-3ECH01HM3/9AT

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Qualification	Grade	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-3ECH01HM3/9AT	AEC-Q101	Automotive	DO-214AB SMC	900 mV	175 ░C	-55 C	Standard Recovery >500ns	200 mA	3 A	DO-214AB (SMC)	2 µA	Standard	Surface Mount	100 V

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General part information

Diode 100 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources