CSICD05-1200 TR13

Obsolete

Central Semiconductor Corp

DIODE SIL CARBIDE 1.2KV 5A DPAK

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE SIL CARBIDE 1.2KV 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CSICD05-1200 TR13

Capacitance @ Vr, F	240 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	190 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Reverse Recovery Time (trr)	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
Central Semiconductor Corp CSICD05-1200 TR13	190 µA	Surface Mount	DPAK	175 ░C	-55 C	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	240 pF	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 A	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 5A Surface Mount DPAK

Technical documentation and resources

No documents available