
US1GE-TP
ObsoleteMicro Commercial Components
DIODE GEN PURP 400V 1A SMAE
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US1GE-TP
ObsoleteMicro Commercial Components
DIODE GEN PURP 400V 1A SMAE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | US1GE-TP |
|---|---|
| Capacitance @ Vr, F | 20 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -50 °C |
| Package / Case | DO-214AC, SMA |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | SMAE |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
US1G Series
Diode 400 V 1A Surface Mount SMAE
Documents
Technical documentation and resources
No documents available