123NQ080

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 80V 120A D-67

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 80V 120A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	123NQ080

Capacitance @ Vr, F	2650 pF
Current - Average Rectified (Io)	120 A
Current - Reverse Leakage @ Vr	3 mA
Mounting Type	Chassis Mount
Package / Case	D-67 HALF-PAK
Speed	200 mA, 500 ns
Supplier Device Package	D-67 HALF-PAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	910 mV

Part	Package / Case	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division 123NQ080	D-67 HALF-PAK	2650 pF	3 mA	Schottky	Chassis Mount	910 mV	D-67 HALF-PAK	200 mA 500 ns	80 V	120 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 120A Chassis Mount D-67 HALF-PAK

Technical documentation and resources